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| Preliminary data SPN01N60S5 Cool MOS Power-Transistor New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Optimized capacitances Improved noise immunity C OLMO O S Power Semiconductors Product Summary VDS @ Tjmax RDS(on) ID SOT-223 i 650 6 0.3 V A i i i EIeiei Type SPN01N60S5 Package SOT-223 Ordering Code Q67040-S4208 Marking 01N60S5 G,1 D,2/4 S,3 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TA = 25 C TA = 70 C Pulsed drain current TA = 25 C Reverse diode dv/dt IS = 0.3 A, VDS Symbol ID Value 0.3 0.2 Unit A ID puls 1.6 1 2001-07-25 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Thermal Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJS RthJA 110 35 Symbol min. SPN01N60S5 Values typ. max. 72 Unit K/W K/W Static Characteristics, at Tj = 25 C, unless otherwise specified Drain-source breakdown voltage VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 250 A, Tj = 25 C Zero gate voltage drain current, VDS=VDSS VGS = 0 V, Tj = 25 C VGS = 0 V, Tj = 150 C Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-source on-state resistance VGS = 10 V, ID = 0.2 A RDS(on) 5.5 6 IGSS VGS(th) IDSS 0.5 1 50 100 nA 2.3 3 3.7 A V(BR)DSS 600 V 1current limited by T jmax 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. 2 2001-07-25 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Total gate charge Qgs Qgd Qg VDD =350V, ID =0.3A, VGS =0 to 10V VDD =350V, ID =0.3A SPN01N60S5 Symbol Conditions min. Values typ. 0.45 100 40 2.5 45 30 60 30 90 45 max. - Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS 2*ID *RDS(on)max , ID =0.2A VGS =0V, VDS =25V, f=1MHz - S pF VDD =350V, VGS =10V, ID =0.3A, RG=100 ns - 0.9 2.2 3.9 5 nC Reverse Diode Inverse diode continuous forward current Inverse diode direct current,pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0V, IF =0.3A VR =100V, IF=lS, diF /dt=100A/s IS ISM TC=25C - 0.85 200 0.45 0.3 1.6 1.05 340 - A V ns C 3 2001-07-25 Preliminary data Power Dissipation Ptot = f (TA ) 1.9 W 1.6 1.4 0.24 SPN01N60S5 SPN01N60S5 Drain current ID = f (TA ) parameter: VGS 10 V 0.32 A SPN01N60S5 Ptot ID C 1.2 1 0.8 0.2 0.16 0.12 0.6 0.08 0.4 0.2 0 0 0.04 20 40 60 80 100 120 160 0 0 20 40 60 80 100 120 C 160 TA TA Safe operating area ID =f (VDS) parameter: D=0.01, TC =25C 10 A tp = 16.0s 1 SPN01N60S5 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 2 K/W SPN01N60S5 10 0 100 s 10 1 10 -1 Z thJA 10 0 D = 0.50 single pulse 0.20 0.10 ID 1 ms 10 ms 10 -2 10 -1 0.05 0.02 0.01 DC 10 -3 0 10 10 -2 -5 -4 -3 10 10 10 10 10 1 10 2 V 10 3 -2 10 -1 10 0 10 1 10 2 s tp 10 4 VDS 4 2001-07-25 Preliminary data Typ. output characteristic ID = f (VDS) Parameter: VGS , Tj = 25 C 2.5 SPN01N60S5 Drain-source on-resistance RDS(on) = f (Tj ) parameter : ID = 0.2 A, VGS = 10 V 15 20V 10V A 7V 12 98% typ. R DS(on) 6.5V 11 10 9 8 ID 1.5 6V 1 7 6 5 5.5V 0.5 5V 4 3 2 1 0 0 5 10 15 V VDS 25 0 -60 -20 20 60 100 C Tj 180 Typ. transfer characteristics ID = f ( VGS ) VDS 2 x ID x RDS(on)max 2.5 Typ. capacitances C = f (VDS) parameter: VGS =0 V, f=1 MHz 10 3 pF A Ciss 10 2 ID 1.5 C 1 10 1 Coss 0.5 Crss 0 0 4 8 12 20 10 0 0 10 20 30 40 50 60 70 80 VGS V V 100 VDS 5 2001-07-25 Preliminary data Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPN01N60S5 SPN01N60S5 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = 250 A 5 720 V V 4 V(BR)DSS 680 V GS(th) 3.5 3 2.5 98% 660 640 620 typ. 2 600 580 560 540 -60 1.5 1 0.5 0 -60 2% -20 20 60 100 C 180 -20 20 60 100 C Tj 180 Tj Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 10 s 10 1 SPN01N60S5 Typ. gate charge VGS = f (QGate) parameter: ID = 0.3 A pulsed 16 V SPN01N60S5 A 12 V GS 10 0 IF 10 0,2 VDS max 0,8 VDS max 8 10 -1 T j = 25 C typ T j = 150 C typ T j = 25 C (98%) T j = 150 C (98%) 10 -2 0 6 4 2 0.4 0.8 1.2 1.6 2 2.4 V 3 0 0 1 2 3 4 VSD 6 nC Qg 5.5 2001-07-25 Preliminary data SPN01N60S5 eoe ooi i ooi i ooi 1/21/2o UxO eeei oi ioe ooi i oe ooi i i ioi ioe oie O oie O UIeee 7 2001-07-25 Preliminary data SPN01N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2001-07-25 |
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